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Power Semiconductor
/ 1200V 100A IGBT Power
1200V 100A IGBT Power
VCES=1200V, IC(nom)=100A
Module
Choose an option IGBT
Package
Choose an option Econo PIM 2H
Feature
Choose an option D
Circuit Diagram
Choose an option FT: Three phase
Blocking Voltage (V)
Choose an option 1200
Module Current (A)
Choose an option 100
Tjmax (℃)
Choose an option 150
SKU
HCG100FT120M2D
Category
Power Semiconductor
DESCRIPTION
Description
Features
Low inductive design
Low Vcesat with high junction temperature
Fast & soft reverse recovery anti-parallel FWD
Low Switching Losses
Benefits
Higher System Efficiency
Reduce cooling requirements
Increased power density
Enabling higher frequency
Applications
Inverter for motor drive
AC and DC servo drive amplifier
Uninterruptible power supply
Absolute Maximum Ratings
Tc=25°C unless otherwise noted