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Power Semiconductor
/ 1200V 16A Silicon Carbide Schottky Diode
1200V 16A Silicon Carbide Schottky Diode
VRRM = 1200 V IF (Tc=155 ℃) = 16 A QC = 106 nC
Module
Choose an option
Package
Choose an option TO-247-3
Blocking Voltage (V)
Choose an option 1200
Module Current (A)
Choose an option 16
Tjmax (℃)
Choose an option 155
SKU
HCD5G16120D
Category
Power Semiconductor
DESCRIPTION
Description
Features
1200V Schottky Rectifier
Zero Reverse Recovery Current
High-Frequency Operation
Temperature-Independent Switching
Extremely Fast Switching
Benefits
Replace Bipolar with Unipolar Rectifiers
Essentially No Switching Losses
High Efficiency
Reduction of Heat Sink Requirements
Parallel Devices Without Thermal Runaway
Applications
Switching Mode Power Supply
Boost Diodes in PFC
DC/DC Converters
AC/DC Converters
Free Wheeling Diodes in Inverter
Maximum Ratings
Tc=25°C unless otherwise specified