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Power Semiconductor
/ 1200V 200A IGBT Power
1200V 200A IGBT Power
VCES=1200V, IC(nom)=200A
Module
Choose an option IGBT
Package
Choose an option 62mm
Feature
Choose an option D
Circuit Diagram
Choose an option Half Bridge
Blocking Voltage (V)
Choose an option 1200
Module Current (A)
Choose an option 200
Tjmax (℃)
Choose an option 150
SKU
HCG200FH120A2D
Category
Power Semiconductor
DESCRIPTION
Description
Features
Low inductive design
Low Vcesat with high junction temperature
Fast & soft reverse recovery anti-parallel FWD
Low Switching Losses
Benefits
Higher System Efficiency
Reduce cooling requirements
Increased power density
Enabling higher frequency
Applications
Inverter for motor drive
AC and DC servo drive amplifier
Uninterruptible power supply
Absolute Maximum Ratings
Tc=25°C unless otherwise noted