1200V 32mΩ Silicon Carbide Power MOSFET TO-247-4L – mingjun-bm.com

1200V 32mΩ Silicon Carbide Power MOSFET TO-247-4L

1200V 32mΩ Silicon Carbide Power MOSFET TO-247-4L

High blocking voltage (1200V) with ultra-low RDS(on) of 32mΩ
High-speed switching with low parasitic capacitance
Easy parallel operation and simple gate drive
Robust performance up to 175℃ junction temperature
Halogen-free, RoHS-compliant
Suitable for resonant topologies

Module Choose an option SiC MOSFET

Package Choose an option TO-247-4L

Blocking Voltage (V) Choose an option 1200

RDS(on) (mΩ) Choose an option 32

SKU HCM32S12T4K2 Category Power Semiconductor

DESCRIPTION

Description

The HCM32S12T4K2 is a 1200V 32mΩ Silicon Carbide (SiC) Power MOSFET in a TO-247-4L package, designed for high-efficiency and high-reliability applications. Built with 3rd Generation SiC MOSFET technology, it offers low on-resistance, high-speed switching, and excellent thermal performance.

Maximum Ratings

Parameter Symbol Condition Value Unit

Drain-source voltage VDS max VGs=0V,Ip=100μA 1200 V

Gate-source voltage VGS max Absolute maximum values -8/+19 V

VGS op Recommended operational values -4/+15 V

Continuous drain current ID VGs=15V,Tc=25℃ 92 A

VGs=15V,Tc=100℃ 65

Pulsed drain current ID pulse Pulse width tp limited by Tvjmax 276 A

Power dissipation PD Tc=25℃, Tvjmax=175℃ 417 W

Operating junction temperature Tvjop -55~175 ℃

Storage temperature range Tstg -55~175 ℃

Applications

Automotive drive-train systems

Motor drives

Solid-state circuit breakers

Power conversion systems

Dimensions (mm)